Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

Ming Hao Kuo, M. C. Lee, J. W. Tien, Wei Ting Lai, Pei-Wen Li

研究成果: Conference contribution同行評審

摘要

Ge-dot/SiO2/SiGe-channel photoMOSFETs are demonstrated on a Si-photonics platform. The photoMOSFET is fabricated in standard CMOS processes with a self-organized gate stack of Ge-dot/SiO2/SiGe-channel using thermal oxidation of SiGe nanopillars over Si3N4 layers on Si substrates. The Ge-dot photoMOSFET, with 3μm channel length and 70μm channel width, features responsivity of over 2000A/W and 100A/W with 6pW and 0.2μW, respectively, under illumination at 850nm. The responsivity is further improved by reducing the dot size and increasing the spatial density and most importantly, is insensitive to the gate oxide thickness, which is a great benefit for reducing the input capacitance and thus, improving speed and power consumption.

原文English
主出版物標題2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面212-213
頁數2
ISBN(電子)9781509007264
DOIs
出版狀態Published - 27 九月 2016
事件21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
持續時間: 12 六月 201613 六月 2016

出版系列

名字2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
國家United States
城市Honolulu
期間12/06/1613/06/16

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