Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy

A. V. Katkov, Chi-Chuan Wang, J. Y. Chi, C. Cheng, A. K. Gutakovskii

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

An order-of-magnitude increase of photoluminescence (PL) efficiency at room temperature has been observed in the GaAs/InAs quantum dots (QDs)-in-a-well structure grown with in situ irradiation of atomic hydrogen supplied by a radio-frequency hydrogen-plasma source. The enhancement in PL intensity rapidly increases with the hydrogen flow rate and is stable with a variation of excitation power in the radio-frequency plasma source. Extensive thermal annealing of grown samples up to 634°C did not show any significant degradation of photoluminescence intensity compared with the reference sample. The reduction of nonradiative recombination centers in the as-grown sample causes the greatly enhanced luminescence property. In addition to PL enhancement the authors observed that the H-assisted growth of InAs QDs has suppressed bimodal distribution of QD shape. In contrast to the hydrogen-plasma-assisted growth, irradiation by hydrogen in molecular form has a detrimental effect on the optical properties of similar structures. The high thermal stability of improved optical properties suggests that the formation of the defects which are responsible for nonradiative recombination channels is suppressed during H-assisted epitaxy although in situ defect passivation by atomic hydrogen cannot be completely ruled out.

原文English
文章編號03C127
期刊Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
29
發行號3
DOIs
出版狀態Published - 1 一月 2011

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