Optical properties of the ZnSe1-xTex epilayers grown by molecular beam epitaxy

C. S. Yang, D. Y. Hong, C. Y. Lin, Wu-Ching Chou*, C. S. Ro, W. Y. Uen, W. H. Lan, S. L. Tu

*Corresponding author for this work

研究成果: Article同行評審

41 引文 斯高帕斯(Scopus)

摘要

ZnSe1-xTex epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1-xTex epilayers was found to increase with the Te concentration.

原文English
頁(從 - 到)2555-2559
頁數5
期刊Journal of Applied Physics
83
發行號5
DOIs
出版狀態Published - 1 三月 1998

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