Optical properties of a-plane InGaN/GaN multiple quantum wells grown on nanorod lateral overgrowth templates

Huei Min Huang*, Shih Chun Ling, Wei Wen Chan, Tien-Chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dependent photoluminescence (PL). Due to the absence of quantum-confined Stark effect, the negligible PL emission peak shift and nearly identical power index for all samples were observed. In contrast to the as-grown MQWs, the thermal activation energy and internal quantum efficiency of NRELOG MQWs exhibit 1.6-fold and 4-fold increases, respectively, which are attributed to the improvement of crystal quality by NRELOG. Furthermore, the Shockley-Read-Hall nonradiative coefficient, determined from the fits of power-dependent PL quantum efficiency, is also apparently reduced while MQWs are grown on NRELOG GaN template. The results show the feasibility to fabricate high radiative efficiency a-plane devices via NRELOG.

原文English
文章編號5892865
頁(從 - 到)1101-1106
頁數6
期刊IEEE Journal of Quantum Electronics
47
發行號8
DOIs
出版狀態Published - 八月 2011

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