Optical fine structures of highly quantized InGaAs/GaAs self-assembled quantum dots

H. Y. Ramirez, C. H. Lin, C. C. Chao, Y. Hsu, W. T. You, S. Y. Huang, Y. T. Chen, H. C. Tseng, Wen-Hao Chang, Sheng-Di Lin, Shun-Jen Cheng

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18 引文 斯高帕斯(Scopus)

摘要

A theoretical model for the electron-hole exchange interaction in three-dimensionally (3D) confining semiconductor nanostructures is presented to explain the observed decreasing tendency of the fine-structure splittings (FSSs) of small InGaAs/GaAs self-assembled quantum dots (QDs) with increasing the emission energies. The experimentally revealed FSS reduction is shown to be highly associated with the significant 3D spreading of electronic orbitals and reduced overlap of electron and hole wave functions in small and/or Ga-diffused QDs. The combination of quantum size and Ga-diffusion effects substantially reduces the averaged e-h exchange interaction and leads to the reduced FSSs in the regime of high emission energy.

原文English
文章編號245324
頁(從 - 到)1-7
頁數7
期刊Physical Review B - Condensed Matter and Materials Physics
81
發行號24
DOIs
出版狀態Published - 15 六月 2010

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