Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate

Ching Hsueh Chiu*, Chien-Chung Lin, Dongmei Deng, Hao-Chung Kuo, Kei May Lau

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on Micro and Nano-scale Patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy (TEM) images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nanoscale epitaxial lateral overgrowth (NELOG). The plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous substrates. From temperature dependent photoluminescence (PL) and low temperature time-resolved photoluminescence (TRPL) measurement, NPLEDs has better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibits smaller electroluminescence (EL) peak wavelength blue shift, lower reverse leakage current and decreases efficiency droop compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.

原文English
主出版物標題Eleventh International Conference on Solid State Lighting
DOIs
出版狀態Published - 17 十月 2011
事件11th International Conference on Solid State Lighting - San Diego, CA, United States
持續時間: 22 八月 201124 八月 2011

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8123
ISSN(列印)0277-786X

Conference

Conference11th International Conference on Solid State Lighting
國家United States
城市San Diego, CA
期間22/08/1124/08/11

指紋 深入研究「Optical and electrical properties of GaN-based light emitting diodes grown on micro and nano-scale patterned Si substrate」主題。共同形成了獨特的指紋。

引用此