One-transistor PZT/Al2O3, SBT/Al2O3 and BLT/Al2O3 stacked gate memory

M. Y. Yang, S. B. Chen, Albert Chin, C. L. Sun*, B. C. Lan, San-Yuan Chen

*Corresponding author for this work

研究成果: Conference article

11 引文 斯高帕斯(Scopus)

摘要

We have compared the memory performance of one-transistor ferroelectric MOSFET (FeMOSFET) with stacked Pb(Zr,Ti)O3 (PZT), SrBi2Ta2O9 (SBT), and Bi3.75La0.25Ti3O12 (BLT)/40Å-Al2O3 gate dielectrics. The SBT/Al2O3 FeMOSFET has the largest ION/IOFF of greater than 2 orders of magnitude, and the PZT/Al2O3 FeMOSFET has the fast 10ns program/erase time, >1011 program/erase endurance, and 10 years retention.

原文English
頁(從 - 到)795-798
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 十二月 2001
事件IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
持續時間: 2 十二月 20015 十二月 2001

指紋 深入研究「One-transistor PZT/Al<sub>2</sub>O<sub>3</sub>, SBT/Al<sub>2</sub>O<sub>3</sub> and BLT/Al<sub>2</sub>O<sub>3</sub> stacked gate memory」主題。共同形成了獨特的指紋。

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