One-dimensional semiconductor nanostructures as absorber layers in solar cells

K. P. Jayadevan, Tseung-Yuen Tseng*

*Corresponding author for this work

研究成果: Article同行評審

41 引文 斯高帕斯(Scopus)

摘要

The one-dimensional (1-D) nanostructures of cadmium chalcogenides (II-VI: CdSe, CdTe), InP and GaAs (III-V), and the ternary chalcopyrites CulnS 2, CulnSe 2, and CulnTe 2 (I-III-VI 2) are the candidate semiconductors of interest as absorber layers in solar cells. In the confinement regime (∼1-10 nm) of these 1-D nanostructures, the electronic energy levels are quantized so that the oscillator strength and the resultant absorption of solar energy are enhanced. Moreover, the discrete energy levels effectively separate the electrons and holes at the two electrodes or at the interfaces with a polymer in a hybrid structure, so that an oriented and 1-D nanostructured absorber layer is expected to improve the conversion efficiency of solar cells. The intrinsic anisotropy of II-VI and I-III-VI 2 crystal lattices and the progress in various growth processes are assessed to derive suitable morphological features of these 1-D semiconductor nanostructures. The present status of research in nanorod-based solar cells is reviewed and possible routes are identified to improve the performance of nanorod-based solar cells. Finally, the characteristics of nanorod-based solar cells are compared with the dye-sensitized and organic solar cells.

原文English
頁(從 - 到)1768-1784
頁數17
期刊Journal of Nanoscience and Nanotechnology
5
發行號11
DOIs
出版狀態Published - 1 十二月 2005

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