One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Akira Nakajima, Sin Ichi Nishizawa, Hiromichi Ohashi, Hiroaki Yonezawa, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

研究成果: Conference contribution

11 引文 斯高帕斯(Scopus)

摘要

Monolithic operation of GaN-based P-channel (Pch) and N-channel (Nch) heterojunction field effect transistors (HFETs) are demonstrated for the first time. The Pch and Nch HFETs were fabricated on a polarization junction platform with polarization induced 2D hole gas (2DHG) and 2D electron gas (2DEG). Because of temperature independent densities of the 2DHG and 2DEG, the HFETs can be operated in wide temperature range. Based on a measured 2DHG mobility, footprints of low-voltage Pch HFETs for gate drive applications were estimated by device simulation.

原文English
主出版物標題Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面241-244
頁數4
ISBN(列印)9781479929177
DOIs
出版狀態Published - 2014
事件26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States
持續時間: 15 六月 201419 六月 2014

出版系列

名字Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(列印)1063-6854

Conference

Conference26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
國家United States
城市Waikoloa, HI
期間15/06/1419/06/14

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  • 引用此

    Nakajima, A., Nishizawa, S. I., Ohashi, H., Yonezawa, H., Tsutsui, K., Kakushima, K., Wakabayashi, H., & Iwai, H. (2014). One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. 於 Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (頁 241-244). [6856021] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2014.6856021