On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues

John D. Cressler, Emmanuel F. Crabbé, James H. Comfort, Johannes M. Stork, Jack Y.C. Sun

研究成果: Article同行評審

45 引文 斯高帕斯(Scopus)

摘要

We present a detailed examination of the circuit performance issues associated with optimizing epitaxial Si and SiGe-base bipolar technology for the liquid-nitrogen temperature environment. We conclusively demonstrate that the common notion that silicon-based bipolar circuits perform poorly at low temperatures is simply untrue. Transistor frequency response is examined both theoretically and experimentally, with particular attention given to the differences between SiGe and Si devices as a function of temperature. ECL and NTL ring oscillator circuits were fabricated for each of the four profiles described in our companion paper (this issue). A minimum ECL gate delay of 28.1 ps at 84 K was measured for a SiGe-base profile, and is essentially unchanged from its room-tempera-ture value of 28.8 ps at 310 K. ASTAP models were calibrated to data and used to explore circuit operation under typical wire loading. For 5.65-mW ECL circuits driving 10-mm wire inter-connects, reductions in wire resistance as well as reduced logic swing operation yield 84 K circuit delays as much as 2.7 x faster than at 310 K. We conclude that epitaxial-base bipolar technology offers significant leverage for future cryogenic applications.

原文English
頁(從 - 到)542-556
頁數15
期刊IEEE Transactions on Electron Devices
40
發行號3
DOIs
出版狀態Published - 三月 1993

指紋 深入研究「On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues」主題。共同形成了獨特的指紋。

引用此