On the prediction of geometry-dependent floating-body effect in SOI MOSFETs

Pin Su*, Wei Lee

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

This brief demonstrates that, through the perspective of body-source built-in potential lowering (Vbi), the geometry-dependent floating-body effect in state-of-the-art silicon-on-insulator (SOI) MOSFETs can be explained and predicted by the geometry dependence of threshold voltage (VT). The correlation between Vbi and VT unveiled in this brief is the underlying mechanism responsible for the coexistence of partially depleted and fully depleted devices in a single SOI chip.

原文English
頁(從 - 到)1662-1664
頁數3
期刊IEEE Transactions on Electron Devices
52
發行號7
DOIs
出版狀態Published - 1 七月 2005

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