In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional δ-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.
|主出版物子標題||Asia-Pacific Microwave Conference Proceedings 2005|
|出版狀態||Published - 1 十二月 2005|
|事件||APMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China|
持續時間: 4 十二月 2005 → 7 十二月 2005
|名字||Asia-Pacific Microwave Conference Proceedings, APMC|
|Conference||APMC 2005: Asia-Pacific Microwave Conference 2005|
|期間||4/12/05 → 7/12/05|