On the doping effects for linearity improvement of InGaP/InGaAs PHEMT

Yueh Chin Lin*, J. W. Chang, Edward Yi Chang, X. Y. Chang

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional δ-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.

原文English
主出版物標題APMC 2005
主出版物子標題Asia-Pacific Microwave Conference Proceedings 2005
DOIs
出版狀態Published - 1 十二月 2005
事件APMC 2005: Asia-Pacific Microwave Conference 2005 - Suzhou, China
持續時間: 4 十二月 20057 十二月 2005

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
2

Conference

ConferenceAPMC 2005: Asia-Pacific Microwave Conference 2005
國家China
城市Suzhou
期間4/12/057/12/05

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