On the Accuracy of Channel Length Characterization of LDD MOSFET's

Jack Y.C. Sun, Matthew R. Wordeman, Stephen E. Laux

研究成果: Article同行評審

51 引文 斯高帕斯(Scopus)

摘要

A comprehensive investigation into the various mechanisms that limit the accuracy of channel length extraction techniques for lightly doped drain (LDD) MOSFET's is presented. Analytic equations are derived to quantify the sensitivity of the extraction techniques to the geometry effect and bias dependence of the n- source and drain resistance. The analytic approach is supplemented and verified by exercising channel length extraction algorithms on current-voltage characteristics obtained from rigorous numerical simulations of a variety of LDD MOSFET's. The analyses clearly show that low gate overdrives and consistent threshold voltage measurements are required to accurately extract the metallurgical channel length. The analytic equations can be used to project the limitations of channel length extraction methods for future submicrometer LDD MOSFET's.

原文English
頁(從 - 到)1556-1562
頁數7
期刊IEEE Transactions on Electron Devices
33
發行號10
DOIs
出版狀態Published - 十月 1986

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