Ohmic contact on n-type Ge using Yb-germanide

Zhi Wei Zheng, Teng Chieh Ku, Ming Liu, Albert Chin*

*Corresponding author for this work

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Poor ohmic contact by Fermi-level pinning to valence band (EV) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 °C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

原文English
文章編號223501
期刊Applied Physics Letters
101
發行號22
DOIs
出版狀態Published - 26 十一月 2012

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