Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature

Sheng-Di Lin*, V. V. Ilchenko, V. V. Marin, N. V. Shkil, A. A. Buyanin, K. Y. Panarin, O. V. Tretyak

*Corresponding author for this work

研究成果: Article

21 引文 斯高帕斯(Scopus)

摘要

The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs.

原文English
文章編號263114
期刊Applied Physics Letters
90
發行號26
DOIs
出版狀態Published - 2 八月 2007

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    Lin, S-D., Ilchenko, V. V., Marin, V. V., Shkil, N. V., Buyanin, A. A., Panarin, K. Y., & Tretyak, O. V. (2007). Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature. Applied Physics Letters, 90(26), [263114]. https://doi.org/10.1063/1.2752737