Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet chemical etching

T. C. Wen*, S. C. Lee, H. S. Chuang, C. H. Chiou, Wei-I Lee

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This work investigates dislocation etch pits in epitaxial lateral overgrowth (ELO) GaN by wet chemical etching. A mixture of H 2 SO 4 and H 3 PO 4 was used as a dislocation etchant, and SEM and AFM were employed to observe the surface topography. For the as-grown sample, SEM images present the flat, smooth surface without any pits or hillocks. After the chemical etching, hexagonal shaped etch pits were observed at the edge of ELO GaN. AFM observation of etched ELO GaN displayed high densities of etch pits clustered in the "window" region and the coalescent line of two growing fronts. In contrast, the overgrowth region was nearly free of etch pits. Moreover, we observed that different sizes of etch pits dominated in "window" region and coalescent region. This implied different types dislocations dominated in these regions.

原文English
期刊Materials Research Society Symposium - Proceedings
639
出版狀態Published - 1 十二月 2001
事件GaN and Related Alloys 2000 - Boston, MA, United States
持續時間: 27 十一月 20001 十二月 2000

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