N2O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium-gallium-zinc-oxide thin film transistors

Geng Wei Chang, Ting Chang Chang*, Jhe Ciou Jhu, Tsung Ming Tsai, Yong En Syu, Kuan Chang Chang, Fu Yen Jian, Ya Chi Hung, Ya-Hsiang Tai

*Corresponding author for this work

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

N2O plasma treatment suppressed the temperature-dependent sub-threshold leakage current of amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). For untreated devices, the transfer curve exhibited abnormal electrical properties at high temperature. The abnormal electrical properties are explained by the energy band diagrams for both forward and reverse sweep. Above 400K, holes can be generated from trap-assisted transition, and drift to the source side which induces source barrier lowering. The source side barrier lowering enhances electron injection from the source to channel and causes an apparent sub-threshold leakage current. This phenomenon, which is experimentally verified, only appears in the device without N2O plasma treatment, but not in the device with N2O plasma treatment. The results suggested that the density of states for a-IGZO with N2O plasma treatment is much lower than that without plasma treatment.

原文English
頁(從 - 到)281-284
頁數4
期刊Surface and Coatings Technology
231
DOIs
出版狀態Published - 25 九月 2013

指紋 深入研究「N<sub>2</sub>O plasma treatment suppressed temperature-dependent sub-threshold leakage current of amorphous indium-gallium-zinc-oxide thin film transistors」主題。共同形成了獨特的指紋。

引用此