Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention

Steve S. Chung, Y. H. Tseng, C. S. Lai, Y. Hsu, Eric Ho, Terry Chen, L. C. Peng, C. H. Chu

研究成果: Conference article

17 引文 斯高帕斯(Scopus)

摘要

A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.

原文English
文章編號4418972
頁(從 - 到)457-460
頁數4
期刊Technical Digest - International Electron Devices Meeting, IEDM
DOIs
出版狀態Published - 1 十二月 2007
事件2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
持續時間: 10 十二月 200712 十二月 2007

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