Novel phenomenon of the al-1 wt%si contacts on the nf3/ar post-etching-treated n-si substrates

Huang-Chung Cheng, Yeong E. Chen, Miin Horng Juang, Huang Chung

研究成果: Article同行評審

摘要

Post-etching treatment (PET) using an in situ NF3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and nC-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the nC-Si substrate and the lower effective surface donor concentration.

原文English
頁(從 - 到)L1312-L1314
期刊Japanese Journal of Applied Physics
32
發行號9
DOIs
出版狀態Published - 1 一月 1993

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