Novel optical properties of Zn1-xMnxSe1-yTey epilayers grown by molecular beam epitaxy

C. S. Ro; Wu-Ching Chou; C. S. Yang; T. Y. Lin; K. C. Chiu; J. L. Shen

doi:10.1016/S0254-0584(98)00228-4

Novel optical properties of Zn_1-xMn_xSe_1-yTe_y epilayers grown by molecular beam epitaxy

C. S. Ro, Wu-Ching Chou^*, C. S. Yang, T. Y. Lin, K. C. Chiu, J. L. Shen

^*Corresponding author for this work

電子物理學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Zn_1-xMn_xSe_1-yTe_y (x ≤ 0.78, 0 ≤ y ≤ 1) epilayers were grown on the GaAs (001) substrate with substrate tilt angle 0°, 3°, 10°, and 15° towards [010] by molecular beam epitaxy. In case of ZnSe_1-yTe_y epilayers, a blue shift of 5 meV was found as the substrate tilt angle increased from 0° to 15°. Whereas in the case of Zn_1-xMn_xSe epilayers, a red shift of 4 meV was found as the substrate tilt angle increased from 0° to 15°. The blue (red) shift in band gap energy is attributed to the increasing incorporation of smaller Se (Zn) ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, a novel photoluminescence channel is proposed to explain the enhanced photoluminescence of the intra-Mn²⁺ ion transition, ⁶A₁ to ⁴T₁ transitions.

原文	English
頁（從 - 到）	232-237
頁數	6
期刊	Materials Chemistry and Physics
卷	57
發行號	3
DOIs	https://doi.org/10.1016/S0254-0584(98)00228-4
出版狀態	Published - 25 一月 1999

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10.1016/S0254-0584(98)00228-4

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title = "Novel optical properties of Zn1-xMnxSe1-yTey epilayers grown by molecular beam epitaxy",

abstract = "Zn1-xMnxSe1-yTey (x ≤ 0.78, 0 ≤ y ≤ 1) epilayers were grown on the GaAs (001) substrate with substrate tilt angle 0°, 3°, 10°, and 15° towards [010] by molecular beam epitaxy. In case of ZnSe1-yTey epilayers, a blue shift of 5 meV was found as the substrate tilt angle increased from 0° to 15°. Whereas in the case of Zn1-xMnxSe epilayers, a red shift of 4 meV was found as the substrate tilt angle increased from 0° to 15°. The blue (red) shift in band gap energy is attributed to the increasing incorporation of smaller Se (Zn) ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, a novel photoluminescence channel is proposed to explain the enhanced photoluminescence of the intra-Mn2+ ion transition, 6A1 to 4T1 transitions.",

keywords = "Kink density, Molecular beam epitaxy, Photoluminescence, Substrate tilt angle, ZnMnSeTe",

author = "Ro, {C. S.} and Wu-Ching Chou and Yang, {C. S.} and Lin, {T. Y.} and Chiu, {K. C.} and Shen, {J. L.}",

year = "1999",

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T1 - Novel optical properties of Zn1-xMnxSe1-yTey epilayers grown by molecular beam epitaxy

AU - Ro, C. S.

AU - Chou, Wu-Ching

AU - Yang, C. S.

AU - Lin, T. Y.

AU - Chiu, K. C.

AU - Shen, J. L.

PY - 1999/1/25

Y1 - 1999/1/25

N2 - Zn1-xMnxSe1-yTey (x ≤ 0.78, 0 ≤ y ≤ 1) epilayers were grown on the GaAs (001) substrate with substrate tilt angle 0°, 3°, 10°, and 15° towards [010] by molecular beam epitaxy. In case of ZnSe1-yTey epilayers, a blue shift of 5 meV was found as the substrate tilt angle increased from 0° to 15°. Whereas in the case of Zn1-xMnxSe epilayers, a red shift of 4 meV was found as the substrate tilt angle increased from 0° to 15°. The blue (red) shift in band gap energy is attributed to the increasing incorporation of smaller Se (Zn) ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, a novel photoluminescence channel is proposed to explain the enhanced photoluminescence of the intra-Mn2+ ion transition, 6A1 to 4T1 transitions.

AB - Zn1-xMnxSe1-yTey (x ≤ 0.78, 0 ≤ y ≤ 1) epilayers were grown on the GaAs (001) substrate with substrate tilt angle 0°, 3°, 10°, and 15° towards [010] by molecular beam epitaxy. In case of ZnSe1-yTey epilayers, a blue shift of 5 meV was found as the substrate tilt angle increased from 0° to 15°. Whereas in the case of Zn1-xMnxSe epilayers, a red shift of 4 meV was found as the substrate tilt angle increased from 0° to 15°. The blue (red) shift in band gap energy is attributed to the increasing incorporation of smaller Se (Zn) ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, a novel photoluminescence channel is proposed to explain the enhanced photoluminescence of the intra-Mn2+ ion transition, 6A1 to 4T1 transitions.

KW - Kink density

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - Substrate tilt angle

KW - ZnMnSeTe

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