Novel metamorphic HEMTs with highly doped InGaAs source/drain regions for high frequency applications

Kartika Chandra Sahoo, Chien I. Kuo, Yiming Li, Edward Yi Chang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

In this paper, we report the first result of a strained In0.52 Ga0.48 As channel high-electron mobility transistor (HEMT) featuring highly doped In0.4Ga0.6As source/drain (S/D) regions. A lattice mismatch of 0.9% between In0.52Ga0.48 As and In0.4Ga0.6As S/D has resulted in a lateral strain in the In0.52 Ga0.48As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.

原文English
文章編號5560785
頁(從 - 到)2594-2598
頁數5
期刊IEEE Transactions on Electron Devices
57
發行號10
DOIs
出版狀態Published - 1 十月 2010

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