Novel InGaZnO inverters utilizing film profile engineering

Horng-Chih Lin*, Ming Hung Wu, Chin Wen Chan, Rong Jhe Lyu, Tiao Yuan Huang

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (VDD) of 5V.

原文English
文章編號081102
期刊Japanese Journal of Applied Physics
54
發行號8
DOIs
出版狀態Published - 1 八月 2015

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