Novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories

Shinji Satoh*, Kazuhiro Shimizu, Tomoharu Tanaka, Fumitaka Arai, Seiichi Aritome, Shirota Riichiro

*Corresponding author for this work

研究成果: Conference article同行評審

7 引文 斯高帕斯(Scopus)

摘要

This paper describes a novel Channel Boost Capacitance (CBC) cell technology suitable for highly scaled and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in self-boosted programming without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2 um-rule. This memory cell is essential for realizing highly scaled, and fast-programming NAND flash memories of 4 Gbit and beyond.

原文English
頁(從 - 到)108-109
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 1 一月 1998
事件Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA
持續時間: 9 六月 199811 六月 1998

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