This paper describes a novel Channel Boost Capacitance (CBC) cell technology suitable for highly scaled and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in self-boosted programming without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2 um-rule. This memory cell is essential for realizing highly scaled, and fast-programming NAND flash memories of 4 Gbit and beyond.
|頁（從 - 到）||108-109|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 一月 1998|
|事件||Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA|
持續時間: 9 六月 1998 → 11 六月 1998