Novel approach to study patterned thin film local stress for microelectronics application

D. W. Zheng*, Xinhua Wang, K. Shyu, C. T. Chang, Weijia Wen, King-Ning Tu

*Corresponding author for this work

研究成果: Paper

摘要

A novel testing methodology to study the full-field stress distribution in patterned microstructures has been developed for microelectronics applications. The testing structure consists of a Si diaphragm, whose deformation caused by the stress due to an overlying patterned thin film is captured by a Twyman-Green interferometer. The finite element model used to analyze this structure assumes a uniform in-plane biaxial initial stress in the patterned thin film before stress relaxation occurs, and gives the Si diaphragm deflection profile which matches the measured values. Hence the full-field stress in the patterned thin film and Si diaphragm can be given. The stress distribution in an electroless Ni pad on a Si diaphragm is used as an example.

原文English
頁面568-571
頁數4
DOIs
出版狀態Published - 1 十二月 1998
事件Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
持續時間: 21 十月 199823 十月 1998

Conference

ConferenceProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
城市Beijing, China
期間21/10/9823/10/98

指紋 深入研究「Novel approach to study patterned thin film local stress for microelectronics application」主題。共同形成了獨特的指紋。

引用此