Novel approach for the two-dimensional simulation of submicron MOSFET's using monotone iterative method

Yiming Li*, Steve S. Chung, Jinn Liang Liu

*Corresponding author for this work

研究成果: Conference article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A new approach, called monotone iterative (MI) method, for the numerical solution of semiconductor device equations is presented. This constructive method is intended to alleviate some major difficulties particularly associated with Newton's method that is the principal methodology to date for the solution of nonlinear semiconductor device equations. The method converges globally with arbitrary initial guess under various bias conditions for a submicron MOSFET. By comparing with a Newton's iterative (NI) method, a speed-up factor of 30 in CPU time can be achieved by the MI method. The method is highly parallel and easy to implement for two- and three-dimensional simulations. Numerical simulations on a submicron N-MOSFET device with various biasing conditions and initial guesses are presented to demonstrate the efficiency of the method.

原文English
頁(從 - 到)27-30
頁數4
期刊International Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs
出版狀態Published - 1 一月 1999
事件Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
持續時間: 7 六月 199910 六月 1999

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