Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm 2 /V-s electron mobility for low-temperature substrates

Chang Hong Shen*, Jia Min Shieh, Hao-Chung Kuo, Jung Y. Huang, Wen Hsien Huang, Chih Wei Hsu, Yu Hsin Lin, Hung Yu Chiu, Huang Yan Jhan, Bau Tong Dai, Ching Ting Lee, Ci Ling Pan, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140°C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm 2 /V-s have been achieved. Device performance with process temperature down to 90°C and 60°C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.

原文English
主出版物標題2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
出版狀態Published - 1 十二月 2010
事件2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
持續時間: 6 十二月 20108 十二月 2010

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
國家United States
城市San Francisco, CA
期間6/12/108/12/10

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