Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica

Jia Min Shieh*, Jung Y. Huang, Wen Chien Yu, Jian Da Huang, Yi Chao Wang, Ching Wei Chen, Chao Kei Wang, Wen Hsien Huang, An Thung Cho, Hao-Chung Kuo, Bau Tong Dai, Fu Liang Yang, Ci Ling Pan

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocrystals could be displaced in the porechannels causing displaced charge distributions and therefore a field-controllable electric polarization. Nonvolatile memory is demonstrated with a metal-oxide-semiconductor field-effect transistor.

原文English
文章編號143501
期刊Applied Physics Letters
95
發行號14
DOIs
出版狀態Published - 19 十月 2009

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