Nonvolatile flash memory devices using CeO2 nanocrystal trapping layer for two-bit per cell applications

Shao Ming Yang*, Chao-Hsin Chien, Jiun Jia Huang, Tan Fu Lei

*Corresponding author for this work

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this study, we demonstrated the characteristics of nonvolatile silicon oxide nitride oxide silicon (SONOS)-type memories using cerium oxide (CeO 2) nanocrystals as a charge storage agent. We observed that the shape of the formed CeO2 nanocrystals is nearly spherical and that their size is almost similar identical to their high density of 5 × 10 11 cm-2. Such CeO2 nanocrystals were formed by depositing a thin CeO2 film of ca. 2-3 nm thickness using an evaporater gun system and then rapid thermal annealing (RTA) in O2 ambient at 900°C for 1 min. The fabricated memory devices show good electrical properties in terms of a sufficiently large memory window (>2 V), program/erase (P/E) speed (0.1/1 ms), retention time up to 104 s with only 5% charge loss, and endurance after 105 cycles with small memory window narrowing and two-bit operation. These properties suggest that the nonvolatile SONOS-type memories with the CeO2 nanocrystal trapping agent can be applied in future flash memories.

原文English
頁(從 - 到)3291-3295
頁數5
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
發行號6 A
DOIs
出版狀態Published - 6 六月 2007

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