Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Ching Wei Chen, Chao-Hsin Chien, Shih Chich Ou, Tsu Hsiu Perng, Da Yuan Lee, Yi Cheng Chen, Horng-Chih Lin, Tiao Yuan Huang, Chun Yen Chang

研究成果: Conference contribution同行評審

摘要

Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.

原文English
主出版物標題Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
發行者Institute of Electrical and Electronics Engineers Inc.
頁面54-57
頁數4
ISBN(電子)4891140372, 9784891140373
DOIs
出版狀態Published - 1 一月 2003
事件International Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
持續時間: 6 十一月 20037 十一月 2003

出版系列

名字Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Conference

ConferenceInternational Workshop on Gate Insulator, IWGI 2003
國家Japan
城市Tokyo
期間6/11/037/11/03

指紋 深入研究「Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric」主題。共同形成了獨特的指紋。

引用此