Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

Minsoo Lee*, Dolf Landheer, Xiaohua Wu, Martin Couillard, Zhenghong Lu, Wai T. Ng, Jianhao Chen, Tien-Sheng Chao, Tanfu Lei

*Corresponding author for this work

研究成果: Conference article同行評審


Ultra-thin HfOxNy gate dielectric films were deposited by pulse-mode metalorganic chemical vapor deposition (MOCVD) with [(C2H5)2Hf (TDEAH) and either NO or O 2 as oxidants. Nitrogen incorporation was studied by jc-ray photoelectron spectroscopy (XPS) and spatially-resolved elemental profiles were obtained by scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS). The results indicate that nitrogen is incorporated throughout the high-k film with a higher concentration in the interface layer between the deposited layer and the Si(100) substrate. The concentration of nitrogen is increased in both layers by using NO instead of O2 as the oxidant. The N in the deposited and interface layers can be replaced by oxygen during oxygen ambient annealing at temperatures above 500°C. Films with 8 at.% nitrogen remain amorphous following vacuum annealing at temperatures up to 800 °C. By encapsulating vacuum-annealed films with amorphous Si from an e-beam evaporator prior to removal from the cluster tool, it was possible to reduce the thickness of the interface layer upon air exposure to the 0.5 nm range.

頁(從 - 到)211-216
期刊Materials Research Society Symposium Proceedings
出版狀態Published - 1 十二月 2004
事件Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
持續時間: 13 四月 200416 四月 2004

指紋 深入研究「Nitrogen distribution and oxidation of HfO<sub>x</sub>N<sub>y</sub> gate dielectrics deposited by MOCVD using [(C<sub>2</sub>H<sub>5</sub>) <sub>2</sub>N]<sub>4</sub>Hf with NO and O<sub>2</sub>」主題。共同形成了獨特的指紋。