Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

Cheng-Huang Kuo*, S. J. Chang, Y. K. Su, L. W. Wu, J. F. Chen, J. K. Sheu, J. M. Tsai

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.

原文English
頁(從 - 到)535-537
頁數3
期刊IEEE Transactions on Electron Devices
50
發行號2
DOIs
出版狀態Published - 1 二月 2003

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