Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

Cheng-Huang Kuo, S. J. Chang*, G. C. Chi, K. T. Lam, Y. S. Sun

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

原文English
頁(從 - 到)2153-2155
頁數3
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
3
DOIs
出版狀態Published - 31 七月 2006
事件6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
持續時間: 28 八月 20052 九月 2005

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