We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.
|頁（從 - 到）||2153-2155|
|期刊||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版狀態||Published - 31 七月 2006|
|事件||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
持續時間: 28 八月 2005 → 2 九月 2005