Nitride-based LEDs with nano-scale textured sidewalls using natural lithography

Hung Wen Huang, Hao-Chung Kuo*, J. T. Chu, C. F. Lai, C. C. Kao, Tien-chang Lu, S. C. Wang, R. J. Tsai, C. C. Yu, C. F. Lin

*Corresponding author for this work

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

This investigation describes the development of a InGaN/GaN light-emitting diode (LED) with textured sidewalls using natural lithography with polystyrene spheres (PSs) as the etching mask and dry etching the epitaxial layers of LEDs to achieve nano-scale textured sidewalls. The LED with textured sidewalls increased the output power of the InGaN-GaN multiple quantum well (MQW) LEDs by a factor of 1.3, indicating that the LED with nano-scale textured sidewalls had larger light extraction efficiency. The wall-plug efficiency of nitride-based LEDs was increased by 30% using textured sidewalls.

原文English
文章編號030
頁(從 - 到)2998-3001
頁數4
期刊Nanotechnology
17
發行號12
DOIs
出版狀態Published - 28 六月 2006

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