Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application

F. M. Yang, T. C. Chang*, Po-Tsun Liu, Y. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

*Corresponding author for this work

研究成果: Article

9 引文 斯高帕斯(Scopus)

摘要

In this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry.

原文English
頁(從 - 到)360-363
頁數4
期刊Thin Solid Films
516
發行號2-4
DOIs
出版狀態Published - 3 十二月 2007

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    Yang, F. M., Chang, T. C., Liu, P-T., Yeh, Y. H., Yu, Y. C., Lin, J. Y., Sze, S. M., & Lou, J. C. (2007). Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application. Thin Solid Films, 516(2-4), 360-363. https://doi.org/10.1016/j.tsf.2007.06.131