New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies

Ming Chu King; Albert Chin

doi:10.1109/TSM.2008.2000267

New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies

Ming Chu King^*, Albert Chin

^*Corresponding author for this work

電子工程學系

研究成果: Article

4 引文斯高帕斯（Scopus）

摘要

The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.

原文	English
文章編號	4512068
頁（從 - 到）	244-247
頁數	4
期刊	IEEE Transactions on Semiconductor Manufacturing
卷	21
發行號	2
DOIs	https://doi.org/10.1109/TSM.2008.2000267
出版狀態	Published - 1 五月 2008

存取文件

10.1109/TSM.2008.2000267

Link to publication in Scopus

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引用此

King, M. C., & Chin, A. (2008). New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies. IEEE Transactions on Semiconductor Manufacturing, 21(2), 244-247. [4512068]. https://doi.org/10.1109/TSM.2008.2000267

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