New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies

Ming Chu King*, Albert Chin

*Corresponding author for this work

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.

原文English
文章編號4512068
頁(從 - 到)244-247
頁數4
期刊IEEE Transactions on Semiconductor Manufacturing
21
發行號2
DOIs
出版狀態Published - 1 五月 2008

指紋 深入研究「New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies」主題。共同形成了獨特的指紋。

  • 引用此