We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. The current-voltage (I-V) characteristics show strong dependence on the lattice-mismatched strain.
|頁（從 - 到）||392-401|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 18 八月 2004|
|事件||Micro- and Nanoelectronics 2003 - Zvenigorod, Russian Federation|
持續時間: 6 十月 2003 → 10 十月 2003