New peculiarities of interband tunneling in broken-gap heterostructures

A. Zakharova*, Shun-Tung Yen, K. A. Chao

*Corresponding author for this work

研究成果: Conference article

摘要

We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. The current-voltage (I-V) characteristics show strong dependence on the lattice-mismatched strain.

原文English
頁(從 - 到)392-401
頁數10
期刊Proceedings of SPIE - The International Society for Optical Engineering
5401
DOIs
出版狀態Published - 18 八月 2004
事件Micro- and Nanoelectronics 2003 - Zvenigorod, Russian Federation
持續時間: 6 十月 200310 十月 2003

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