New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI reliabilities for 65nm node CMOS devices and beyond

Steve S. Chung, D. C. Huang, Y. J. Tsai, C. S. Lai, C. H. Tsai, P. W. Liu, Y. H. Lin, C. T. Tsai, G. H. Ma, S. C. Chien, S. W. Sun

研究成果: Conference contribution同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this paper, new observations on the uniaxial and biaxial strain-induced hot carrier reliability and/or NBTI in nMOSFET and pMOSFET respectively have been reported for the first time. Uniaxial and biaxial strained nMOSFET and pMOSFET have been extensively examined. Different mechanisms are responsible for different strains in nMOSFET and pMOSFET. For the nMOFETs, it was found that uniaxial strain device has comparable HC reliability with the control device, while biaxial SiGe-strained device exhibits a much worse reliability. This is related to a large impact ionization rate in a biaxial strain which leads to a much worse reliability. For the pMOSFETs, either uniaxial or biaxial strained device shows a comparable amount of HC degradation, while SiGe S/D strained structure might be better considering process complexity, performance, and reliability. Although NBTI is still a great concern in SiGe S/D devices, embedded SiGe S/D technique can improve greatly the device NBTI reliability. These results provide a valuable guideline for the present 65nm and beyond CMOS device design with focus on the strain engineering.

原文English
主出版物標題2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
出版狀態Published - 1 十二月 2006
事件2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
持續時間: 10 十二月 200613 十二月 2006

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2006 International Electron Devices Meeting, IEDM
國家United States
城市San Francisco, CA
期間10/12/0613/12/06

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