New insights into breakdown modes and their evolution in ultra-thin gate oxide

Horng-Chih Lin, D. Y. Lee, C. Y. Lee, Tien-Sheng Chao, T. Y. Huang, Ta-Hui Wang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, an unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on device's switching behavior are also discussed.

原文English
頁(從 - 到)37-40
頁數4
期刊International Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs
出版狀態Published - 1 一月 2001

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