We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.
|主出版物標題||ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference|
|出版狀態||Published - 1 十二月 2009|
|事件||39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece|
持續時間: 14 九月 2009 → 18 九月 2009
|名字||ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference|
|Conference||39th European Solid-State Device Research Conference, ESSDERC 2009|
|期間||14/09/09 → 18/09/09|