New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

Jack J.Y. Kuo, William P.N. Chen, Pin Su

研究成果: Conference contribution同行評審

摘要

We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

原文English
主出版物標題ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
頁面327-330
頁數4
DOIs
出版狀態Published - 1 十二月 2009
事件39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
持續時間: 14 九月 200918 九月 2009

出版系列

名字ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference39th European Solid-State Device Research Conference, ESSDERC 2009
國家Greece
城市Athens
期間14/09/0918/09/09

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