New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

Jack J.Y. Kuo; William P.N. Chen; Pin Su

doi:10.1109/ESSDERC.2009.5331461

New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

Jack J.Y. Kuo, William P.N. Chen, Pin Su

電子工程學系

研究成果: Conference contribution › 同行評審

摘要

We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

原文	English
主出版物標題	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
頁面	327-330
頁數	4
DOIs	https://doi.org/10.1109/ESSDERC.2009.5331461
出版狀態	Published - 1 十二月 2009
事件	39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece 持續時間: 14 九月 2009 → 18 九月 2009

出版系列

名字	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference	39th European Solid-State Device Research Conference, ESSDERC 2009
國家	Greece
城市	Athens
期間	14/09/09 → 18/09/09

存取文件

10.1109/ESSDERC.2009.5331461

其它文件與鏈接

Link to publication in Scopus

指紋深入研究「New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs」主題。共同形成了獨特的指紋。

引用此

Kuo, J. J. Y., Chen, W. P. N., & Su, P. (2009). New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs. 於 ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (頁 327-330). [5331461] (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331461

@inproceedings{6691ad0f3f8e48c7a4d12740aa9f1a5d,

title = "New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs",

abstract = "We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.",

author = "Kuo, {Jack J.Y.} and Chen, {William P.N.} and Pin Su",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/ESSDERC.2009.5331461",

language = "English",

isbn = "9781424443536",

series = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",

pages = "327--330",

booktitle = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",

note = "null ; Conference date: 14-09-2009 Through 18-09-2009",

}

Kuo, JJY, Chen, WPN & Su, P 2009, New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs. 於 ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331461, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, 頁 327-330, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 14/09/09. https://doi.org/10.1109/ESSDERC.2009.5331461

New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs. / Kuo, Jack J.Y.; Chen, William P.N.; Su, Pin.

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 327-330 5331461 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

AU - Kuo, Jack J.Y.

AU - Chen, William P.N.

AU - Su, Pin

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

AB - We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

UR - http://www.scopus.com/inward/record.url?scp=72949101849&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2009.5331461

DO - 10.1109/ESSDERC.2009.5331461

M3 - Conference contribution

AN - SCOPUS:72949101849

SN - 9781424443536

T3 - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

SP - 327

EP - 330

BT - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Y2 - 14 September 2009 through 18 September 2009

ER -

Kuo JJY, Chen WPN, Su P. New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs. 於 ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 327-330. 5331461. (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331461