Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure

Wei-Kuo Chen*, R. H. Cheng, J. Ou

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm2 at 100 K (300 K).

原文English
頁(從 - 到)1373-1375
頁數3
期刊Applied Physics Letters
71
發行號10
DOIs
出版狀態Published - 8 九月 1997

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