Negative Capacitance FET with 1.8-nm-Thick Zr-Doped HfO2 Oxide

Daewoong Kwon*, Suraj Cheema, Nirmaan Shanker, Korok Chatterjee, Yu Hung Liao, Ava J. Tan, Chen-Ming Hu, Sayeef Salahuddin

*Corresponding author for this work

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO2 gate oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When compared to a baseline that uses HfO2 gate oxide with the same thickness, a subthreshold swing (SS) steeper by more than 20 mV/decade and larger than 10X reduction in the OFF current ( {I}-{ \mathrm{OFF}} ) is observed at 30-nm channel length at constant {I}-{ \mathrm{\scriptscriptstyle ON}}. On the other hand, at matched {I} -{ \mathrm{\scriptscriptstyle OFF}} , the NCFET provides a larger ON current at constant {V}-{\mathrm {DD}}. Our results indicate that the beneficial characteristic offered by the NCFETs can be obtained at scaled channel lengths, while using oxide layers whose thickness is comparable to the high- {K} oxide layer used in ultra-scaled nodes.

原文English
文章編號8695029
頁(從 - 到)993-996
頁數4
期刊IEEE Electron Device Letters
40
發行號6
DOIs
出版狀態Published - 1 六月 2019

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