Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs

Kuo Liang Yeh; Jyh-Chyurn Guo

doi:10.1109/TED.2012.2228196

Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs

Kuo Liang Yeh^*, Jyh-Chyurn Guo

^*Corresponding author for this work

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研究成果: Article › 同行評審

25 引文斯高帕斯（Scopus）

摘要

The impact of narrow-width effects on high-frequency performance like f_T, f_MAX, and RF noise parameters, such as NF _min and R_n, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower R_g and higher f_MAX. However, these narrow-OD devices suffer f_T degradation and higher NF_min, even with the advantage of lower R _g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.

原文	English
文章編號	6381483
頁（從 - 到）	109-116
頁數	8
期刊	IEEE Transactions on Electron Devices
卷	60
發行號	1
DOIs	https://doi.org/10.1109/TED.2012.2228196
出版狀態	Published - 7 一月 2013

存取文件

10.1109/TED.2012.2228196

Link to publication in Scopus

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引用此

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