Narrow-width effect on high-frequency performance and RF noise of sub-40-nm multifinger nMOSFETs and pMOSFETs

Kuo Liang Yeh*, Jyh-Chyurn Guo

*Corresponding author for this work

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

The impact of narrow-width effects on high-frequency performance like fT, fMAX, and RF noise parameters, such as NF min and Rn, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower Rg and higher fMAX. However, these narrow-OD devices suffer fT degradation and higher NFmin, even with the advantage of lower R g. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.

原文English
文章編號6381483
頁(從 - 到)109-116
頁數8
期刊IEEE Transactions on Electron Devices
60
發行號1
DOIs
出版狀態Published - 7 一月 2013

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