Narrow-Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Zih Ying Yang, Satoshi Ishii*, Anh Tung Doan, Satish Laxman Shinde, Thang Duy Dao, Yu Ping Lo, Kuo Ping Chen, Tadaaki Nagao

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN-metal–insulator–metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage.

原文English
文章編號1900982
頁數8
期刊Advanced Optical Materials
8
發行號8
DOIs
出版狀態Published - 17 四月 2020

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