Narrow-Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Zih Ying Yang; Satoshi Ishii; Anh Tung Doan; Satish Laxman Shinde; Thang Duy Dao; Yu Ping Lo; Kuo Ping Chen; Tadaaki Nagao

doi:10.1002/adom.201900982

Narrow-Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Zih Ying Yang, Satoshi Ishii^*, Anh Tung Doan, Satish Laxman Shinde, Thang Duy Dao, Yu Ping Lo, Kuo Ping Chen, Tadaaki Nagao

^*Corresponding author for this work

影像與生醫光電研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN-metal–insulator–metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage.

原文	English
文章編號	1900982
頁數	8
期刊	Advanced Optical Materials
卷	8
發行號	8
DOIs	https://doi.org/10.1002/adom.201900982
出版狀態	Published - 17 四月 2020

存取文件

10.1002/adom.201900982

Link to publication in Scopus

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title = "Narrow-Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability",

abstract = "A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN-metal–insulator–metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage.",

keywords = "narrow-band emission, refractory materials, Tamm plasmon polaritons, thermal emission, titanium nitrides",

author = "Yang, {Zih Ying} and Satoshi Ishii and Doan, {Anh Tung} and Shinde, {Satish Laxman} and Dao, {Thang Duy} and Lo, {Yu Ping} and Chen, {Kuo Ping} and Tadaaki Nagao",

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AU - Yang, Zih Ying

AU - Ishii, Satoshi

AU - Doan, Anh Tung

AU - Shinde, Satish Laxman

AU - Dao, Thang Duy

AU - Lo, Yu Ping

AU - Chen, Kuo Ping

AU - Nagao, Tadaaki

PY - 2020/4/17

Y1 - 2020/4/17

N2 - A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN-metal–insulator–metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage.

AB - A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN-metal–insulator–metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage.

KW - narrow-band emission

KW - refractory materials

KW - Tamm plasmon polaritons

KW - thermal emission

KW - titanium nitrides

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