Nanosized-metal-grain-induced characteristic fluctuation in gate-all-around si nanowire metal-oxide-semiconductor devices

Chun Ning Lai, Chien Yang Chen, Yi-ming Li

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this work, we investigate workfunction (WK) fluctuation of gate-all-around Si nanowire MOS devices by solving a sets of 2D Schrödinger-Poisson equations. We discuss characteristic fluctuation in view of randomly interactive quantum confinement with subbands and wavefunctions. The influences of metal-grain size and channel width on the random WK-induced characteristic fluctuation are studied; additionally, the random positions of metal grain are discussed. The WK of metal grain in the corner of square-shaped channel possesses greater impact on characteristic fluctuation because of enhanced corner effect. Devices with a large channel width and small nanosized metal grains suffer from relatively smaller percentage of fluctuation.

原文English
主出版物標題18th International Workshop on Computational Electronics, IWCE 2015
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9780692515235
DOIs
出版狀態Published - 19 十月 2015
事件18th International Workshop on Computational Electronics, IWCE 2015 - West Lafayette, United States
持續時間: 2 九月 20154 九月 2015

出版系列

名字18th International Workshop on Computational Electronics, IWCE 2015

Conference

Conference18th International Workshop on Computational Electronics, IWCE 2015
國家United States
城市West Lafayette
期間2/09/154/09/15

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