Nanoscale 2-bit/cell HfO 2 nanocrystal flash memory

Yu Hsien Lin*, Chao-Hsin Chien

*Corresponding author for this work

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

In this paper, we demonstrate 50-nm trigate nonvolatile HfO 2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO 2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.

原文English
文章編號6099626
頁(從 - 到)412-417
頁數6
期刊IEEE Transactions on Nanotechnology
11
發行號2
DOIs
出版狀態Published - 1 三月 2012

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