This paper presents a nano-roughneneing technique to effectively modify bonding surface for ensuring for the continuation of hermetic encapsulation shrinkage from MEMS to NEMS. The roughening is realized via a non-uniform etch characteristic of PR which is etched then utilized as an etching mask for the following silicon etching process. UV adhesive bonding is utilized for the verification of the nano-roughening for NEMS hermetic encapsulation. The average roughnesses of silicon substarte before and after the modification are 0.4nm and 12.4nm respectively. The roughness increase can effectively provide more than 30% bonding strength enhancement and 8% leakage reduction.