N 2 O plasma treatment suppressed temperature-dependent point defects formation with amorphous indium-gallium-zinc-oxide thin film transistors

Jhe Ciou Jhu, Ting Chang Chang, Geng Wei Chang, Tsung Ming Tsai, Yong En Syu, Fu Yen Jian, Kuan Chang Chang, Ya-Hsiang Tai

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). This phenomenon depends on the defects of a-IGZO active layer of the device, which is treated by N 2 O plasma. This phenomenon only appears in the as-fabricated device, but not in the device with N 2 O plasma treatment, which is experimentally verified. N 2 O plasma treatment enhances the thin film bonding strength which could suppress the formation of temperature-dependent hole. The hole can be generated from oxygen atoms above 400K by leaving their original sites. The N 2 O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N 2 O plasma treatment is much lower than that as-fabricated. The N 2 O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.

原文English
主出版物標題Thermal and Plasma CVD of Nanostructures and Their Applications
發行者Electrochemical Society Inc.
頁面47-55
頁數9
版本31
ISBN(列印)9781623320546
DOIs
出版狀態Published - 1 一月 2013
事件Symposium on Thermal and Plasma CVD of Nanostructures and Their Applications - 221st ECS Meeting - Seattle, WA, United States
持續時間: 6 五月 201210 五月 2012

出版系列

名字ECS Transactions
號碼31
45
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceSymposium on Thermal and Plasma CVD of Nanostructures and Their Applications - 221st ECS Meeting
國家United States
城市Seattle, WA
期間6/05/1210/05/12

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