Multilayer bottom antireflective coatings for high numerical aperture and modified illumination exposure systems

Hsuen Li Chen*, Wonder Fan, Tzyy Jiann Wang, Fu-Hsiang Ko, Chung I. Hsieh

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

To achieve increasing resolution of optical lithography, exposure systems with a high numerical aperture (NA) are essential. The efficiency of the conventional single-layer bottom antireflective coating (BARC) structure will degrade as the incidence angle increases. This is because the reflectance at the resist/substrate interface increases in the large incident-angle regime. Here we demonstrate a multilayer BARC structure for high-NA and modified illumination exposure systems in ArF and F2 lithographies. The multilayer antireflective structure is composed of conventional silicon oxynitride films. By adding an optimized structure, the reflectance can be maintained below 1% at a resist/high reflective substrate interface for the incident angles from 0 to 53 des (i.e. numerical aperture ∼0.8). The swing effect, in the resist is also shown to be significantly reduced.

原文English
頁(從 - 到)3737-3742
頁數6
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
發行號6 B
DOIs
出版狀態Published - 1 六月 2003

指紋 深入研究「Multilayer bottom antireflective coatings for high numerical aperture and modified illumination exposure systems」主題。共同形成了獨特的指紋。

引用此