MOSFET drain engineering for ESD performance

Y. Wei*, Y. Loh, C. Wang, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Hot carrier effect has received the most attention for the drain engineering of sub-micron MOSFET. However, ESD immunity is equally important for the I/O devices. Hot carrier robust LDD (Lightly Doped Drain) structures have been reported to be weak on ESD immunity. Therefore, an alternate drain structure for I/O buffer is necessary to meet all reliability criteria. Three types of MOSFET drain structures, LDD (Lightly Doped Drain), DDD (Double Diffused Drain) and MDD (Moderately Doped Drain), are characterized and compared for three common I/O circuit configurations. Greater than 7kV HBM ESD performance can be achieved. The MDD structure is found to be the best overall choice.

原文English
期刊Electrical Overstress/Electrostatic Discharge Symposium Proceedings
出版狀態Published - 1 十二月 1992
事件Electrical Overstress/Electrostatic Discharge Symposium Proceedings - 1992 EOS/ESD - Dallas, TX, USA
持續時間: 16 九月 199218 九月 1992

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