Hot carrier effect has received the most attention for the drain engineering of sub-micron MOSFET. However, ESD immunity is equally important for the I/O devices. Hot carrier robust LDD (Lightly Doped Drain) structures have been reported to be weak on ESD immunity. Therefore, an alternate drain structure for I/O buffer is necessary to meet all reliability criteria. Three types of MOSFET drain structures, LDD (Lightly Doped Drain), DDD (Double Diffused Drain) and MDD (Moderately Doped Drain), are characterized and compared for three common I/O circuit configurations. Greater than 7kV HBM ESD performance can be achieved. The MDD structure is found to be the best overall choice.
|期刊||Electrical Overstress/Electrostatic Discharge Symposium Proceedings|
|出版狀態||Published - 1 十二月 1992|
|事件||Electrical Overstress/Electrostatic Discharge Symposium Proceedings - 1992 EOS/ESD - Dallas, TX, USA|
持續時間: 16 九月 1992 → 18 九月 1992