TY - JOUR

T1 - Monte Carlo simulation of random dopant fluctuation in C-V characteristics using image charge model and adequately determined length scale

AU - Chih-Wei, Yao

AU - Sano, Nobuyuki

AU - Watanabe, Hiroshi

PY - 2019/8/14

Y1 - 2019/8/14

N2 - In recent years, it has been under discussion how the distribution of discrete dopant ions affects the performance of electron devices. In particular, dopant ions near the interface may not be surrounded by a sufficient number of carriers to achieve full screening. In addition, the screening effect is modeled assuming equilibrium, which cannot be validated. Therefore, the device modeling of the screening effect must be refined to cover the entire range of applied voltages. In the present work, we adequately define the length scale covering the entire voltage region in the capacitance-voltage (C-V) characteristics. Furthermore, we propose an image charge model for residual long-range potential of dopant ions near the interface. The Monte Carlo simulation of random dopant fluctuation in the C-V characteristics of 100 samples of MOS capacitors demonstrates that the main contributor to random dopant fluctuation is the location fluctuation of discrete dopant ions.

AB - In recent years, it has been under discussion how the distribution of discrete dopant ions affects the performance of electron devices. In particular, dopant ions near the interface may not be surrounded by a sufficient number of carriers to achieve full screening. In addition, the screening effect is modeled assuming equilibrium, which cannot be validated. Therefore, the device modeling of the screening effect must be refined to cover the entire range of applied voltages. In the present work, we adequately define the length scale covering the entire voltage region in the capacitance-voltage (C-V) characteristics. Furthermore, we propose an image charge model for residual long-range potential of dopant ions near the interface. The Monte Carlo simulation of random dopant fluctuation in the C-V characteristics of 100 samples of MOS capacitors demonstrates that the main contributor to random dopant fluctuation is the location fluctuation of discrete dopant ions.

UR - http://www.scopus.com/inward/record.url?scp=85072807339&partnerID=8YFLogxK

U2 - 10.7567/1347-4065/ab3538

DO - 10.7567/1347-4065/ab3538

M3 - Article

AN - SCOPUS:85072807339

VL - 58

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 9

M1 - 091004

ER -